发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF USING A FLOWABLE MATERIAL DURING THE CONTROL GATE REMOVAL FOR WORD LINE END FORMATION |
摘要 |
A memory device is provided having a plurality of floating gates and control gates, which at least one control gate has been removed after applying a flowable material to the semiconductor which prevents damage to the substrate when the control gate is removed. Methods of manufacturing such a memory device are also provided. |
申请公布号 |
US2016020216(A1) |
申请公布日期 |
2016.01.21 |
申请号 |
US201414333893 |
申请日期 |
2014.07.17 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Lin Shang-Wei;Hsu Yu-Wei;Hung Yu-Min;Han Tzung-Ting |
分类号 |
H01L27/115;H01L21/28 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsinchu TW |