发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which improves electromigration resistance of wiring to improve reliability.SOLUTION: A semiconductor device comprises: an alloy layer which contains a first metal and a second metal and has a first part and a second part; and a conductive layer which is composed mostly of a nitride of the first metal sandwiched between the first part and the second part and the second metal laminated on the alloy layer.
申请公布号 JP2016012596(A) 申请公布日期 2016.01.21
申请号 JP20140132297 申请日期 2014.06.27
申请人 MICRON TECHNOLOGY INC 发明人 ISHII KENTARO;KAMISAKU TAKASHI
分类号 H01L21/3205;H01L21/768;H01L23/532 主分类号 H01L21/3205
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