发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves electromigration resistance of wiring to improve reliability.SOLUTION: A semiconductor device comprises: an alloy layer which contains a first metal and a second metal and has a first part and a second part; and a conductive layer which is composed mostly of a nitride of the first metal sandwiched between the first part and the second part and the second metal laminated on the alloy layer. |
申请公布号 |
JP2016012596(A) |
申请公布日期 |
2016.01.21 |
申请号 |
JP20140132297 |
申请日期 |
2014.06.27 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
ISHII KENTARO;KAMISAKU TAKASHI |
分类号 |
H01L21/3205;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|