| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a double resist film without causing pattern collapse.SOLUTION: In a semiconductor device manufacturing method, by irradiating UV on patterns 5-1, 5-2 of first photoresist films to form a resist cured layer 6 on a surface, even when a second photoresist film 7 is formed subsequently, or when the second photoresist film 7 is coated, a solvent does not penetrate the first photoresist films 5-1, 5-2 and a resist film without causing pattern collapse of the first photoresist films 5-1, 5-2 can be formed. |
