发明名称 |
Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber |
摘要 |
Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C). |
申请公布号 |
US9023227(B2) |
申请公布日期 |
2015.05.05 |
申请号 |
US201213480967 |
申请日期 |
2012.05.25 |
申请人 |
Applied Materials, Inc. |
发明人 |
Dinev Jivko;Singh Saravjeet;Sirajuddin Khalid M.;Liu Tong;Bajaj Puneet;Mishra Rohit;Srivastava Sonal A.;Yalamanchili Madhava Rao;Kumar Ajay |
分类号 |
B44C1/22;H01L21/3065;H01L21/768 |
主分类号 |
B44C1/22 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method of etching a substrate in a chamber comprising:
(A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer; (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer; and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing the polymeric layer (A) comprises less than 30% of a total cycle time for the depositing the polymeric layer (A), the etching the protective layer (B), and the etching the first layer (C). |
地址 |
Santa Clara CA US |