| 发明名称 |
OPTOELECTRONIC APPARATUS AND FABRICATION METHOD OF THE SAME |
| 摘要 |
An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures. |
| 申请公布号 |
US2016020352(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514800320 |
申请日期 |
2015.07.15 |
| 申请人 |
Fundació Institut de Ciéncies Fotóniques |
发明人 |
Konstantatos Gerasimos;KOPPENS Frank;KUFER Dominik;NIKITSKIY Ivan |
| 分类号 |
H01L31/113;H01L31/0352;H01L31/18;H01L31/0336 |
主分类号 |
H01L31/113 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An optoelectronic apparatus comprising: a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5) characterized in that the transport layer comprises at least a 2-dimensional semiconductor layer (3) and the photosensitizing layer (5) comprises colloidal quantum dots. |
| 地址 |
Castelldefels ES |
