INSULATED GATE SEMICONDUCTOR DEVICE HAVING A SHIELD ELECTRODE STRUCTURE

摘要

A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A trench structure having an insulated shield electrode and an insulated gate electrode is provided in the semiconductor region. The semiconductor device further includes one or more features configured to improve operating performance. The features include terminating the trench structure in the junction blocking region, providing a localized doped region adjoining a lower surface of a body region and spaced apart from the trench structure, disposing a notch proximate to the lower surface of the body region, and/or configuring the insulated shield electrode to have a wide portion adjoining a narrow portion.

主权项

1. An insulated gate semiconductor device structure comprising:
a region of semiconductor material comprising:
a semiconductor substrate;a first semiconductor layer of a first conductivity type and a first dopant concentration on the semiconductor substrate; anda second semiconductor layer on the first semiconductor layer, the second semiconductor layer having the first conductivity type, having a second dopant concentration greater than the first dopant concentration, and having a major surface; a body region of a second conductivity type in the second semiconductor layer extending from the major surface; a first trench structure in the first semiconductor layer and the second semiconductor layer extending from the major surface adjacent the body region, and wherein the first trench structure comprises:
a first trench terminating within the first semiconductor layer;a first insulated gate electrode; anda first insulated shield electrode below the first insulated gate electrode; a second trench structure in the first semiconductor layer and the second semiconductor layer extending from the major surface adjacent the body region and laterally spaced apart from the first trench structure, and wherein the second trench structure comprises:
a second trench terminating within the first semiconductor layer;a second insulated gate electrode; anda second insulated shield electrode below the second insulated gate electrode, wherein the second semiconductor layer is a continuous layer extending between the first trench and the second trench; a first source region of the first conductivity type in the body region adjacent the first trench structure; and a second source region of the first conductivity type in the body region adjacent the second trench structure