SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device includes a first semiconductor region of a second conductivity type selectively formed in the main surface of the semiconductor substrate of a first conductivity type so as to be between a front surface structure of a first semiconductor element and a front surface structure of a second semiconductor element and so as to surround the front surface structure of the first semiconductor element and the front surface structure of the second semiconductor element; a second semiconductor region of the first conductivity type in the main surface of the semiconductor substrate outside the first semiconductor region and separated therefrom; and at least one trench filled with an insulating layer in the first semiconductor region between the first semiconductor element and the second semiconductor element, forming an isolation structure isolating the front surface structure of the first semiconductor element from the front surface structure of the second semiconductor element.

主权项

1: A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type; a first semiconductor element having a front surface structure in a main surface of the semiconductor substrate; a second semiconductor element having a front surface structure in the main surface of the semiconductor substrate, the front surface structure of the second semiconductor element being separated from the front surface structure of the first semiconductor element; a rear surface electrode for the first and second semiconductor elements; a first semiconductor region of a second conductivity type selectively formed in the main surface of the semiconductor substrate so as to be between the front surface structure of the first semiconductor element and the front surface structure of the second semiconductor element and so as to surround the front surface structure of the first semiconductor element and the front surface structure of the second semiconductor element; a second semiconductor region of the first conductivity type formed in the main surface of the semiconductor substrate outside the first semiconductor region and separated therefrom; and at least one trench filled with an insulating layer in the first semiconductor region between the first semiconductor element and the second semiconductor element, respective ends of the at least one trench extending parallel to the main surface out of the first semiconductor region into the second semiconductor region so as to divide the first semiconductor region into a first semiconductor element side and a second semiconductor element side, thereby forming an isolation structure that includes the first semiconductor region between the first semiconductor element and the second semiconductor element and the at least one trench filled with the insulating layer, electrically isolating the front surface structure of the first semiconductor element from the front surface structure of the second semiconductor element.