发明名称 METAL-INSULATOR-METAL CAPACITOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME
摘要 A metal-insulator-metal (MIM) capacitor that includes an insulation pattern on an underlying structure having a capacitor region and a peripheral region surrounding the capacitor region, the insulation pattern having a plurality contact holes that expose portions of the underlying structure in the capacitor region; a lower metal pattern in the capacitor region to cover a top surface of the insulation pattern, sidewalls of the insulation pattern corresponding to sidewalls of the contact holes, and the portions of the underlying structure exposed by the contact holes; a dielectric pattern that covers the lower metal pattern in the capacitor region and a top surface of the insulation pattern in the peripheral region; and an upper metal pattern on the dielectric pattern in the capacitor region and the peripheral region.
申请公布号 US2016020270(A1) 申请公布日期 2016.01.21
申请号 US201514872821 申请日期 2015.10.01
申请人 SK hynix Inc. 发明人 KIM Heon-Joon;HWANG Jae Ho
分类号 H01L49/02;H01L27/06 主分类号 H01L49/02
代理机构 代理人
主权项 1. A metal-insulator-metal (MIM) capacitor comprising: an insulation pattern on an underlying structure having a capacitor region and a peripheral region surrounding the capacitor region, the insulation pattern having a plurality contact holes that expose portions of the underlying structure in the capacitor region; a lower metal pattern in the capacitor region to cover a top surface of the insulation pattern, sidewalls of the insulation pattern corresponding to sidewalks of the contact holes, and the portions of the underlying structure exposed by the contact holes; a dielectric pattern that covers the lower metal pattern in the capacitor region and a top surface of the insulation pattern in the peripheral region; and an upper metal pattern on the dielectric pattern in the capacitor region and the peripheral region.
地址 Gyeonggi-do KR