发明名称 |
METAL-INSULATOR-METAL CAPACITOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME |
摘要 |
A metal-insulator-metal (MIM) capacitor that includes an insulation pattern on an underlying structure having a capacitor region and a peripheral region surrounding the capacitor region, the insulation pattern having a plurality contact holes that expose portions of the underlying structure in the capacitor region; a lower metal pattern in the capacitor region to cover a top surface of the insulation pattern, sidewalls of the insulation pattern corresponding to sidewalls of the contact holes, and the portions of the underlying structure exposed by the contact holes; a dielectric pattern that covers the lower metal pattern in the capacitor region and a top surface of the insulation pattern in the peripheral region; and an upper metal pattern on the dielectric pattern in the capacitor region and the peripheral region. |
申请公布号 |
US2016020270(A1) |
申请公布日期 |
2016.01.21 |
申请号 |
US201514872821 |
申请日期 |
2015.10.01 |
申请人 |
SK hynix Inc. |
发明人 |
KIM Heon-Joon;HWANG Jae Ho |
分类号 |
H01L49/02;H01L27/06 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
|
主权项 |
1. A metal-insulator-metal (MIM) capacitor comprising:
an insulation pattern on an underlying structure having a capacitor region and a peripheral region surrounding the capacitor region, the insulation pattern having a plurality contact holes that expose portions of the underlying structure in the capacitor region; a lower metal pattern in the capacitor region to cover a top surface of the insulation pattern, sidewalls of the insulation pattern corresponding to sidewalks of the contact holes, and the portions of the underlying structure exposed by the contact holes; a dielectric pattern that covers the lower metal pattern in the capacitor region and a top surface of the insulation pattern in the peripheral region; and an upper metal pattern on the dielectric pattern in the capacitor region and the peripheral region. |
地址 |
Gyeonggi-do KR |