| 摘要 |
Provided is a gas barrier film with which a degradation in barrier performance due to a difference in degree of reforming is prevented even when a long body is produced. The present invention provides a gas barrier film that has, atop a resin substrate, a barrier layer including a silicon compound and metal atoms, wherein said barrier layer includes a region A of film thickness Th1 in which the ratio Si:M of the silicon element content Si to the metallic element content M is 1:x, where x ≥ 2, and a region B of film thickness Th2 in which the ratio Si:M of the silicon element content Si to the metallic element content M is 1:1-1:0.1, and Th1 and Th2 satisfy formulas (1) and (2): (1) Th1/Th2 ≥ 2, (2) 20 nm ≤ Th1 < 300 nm. |
