SEMICONDUCTOR DEVICE AND POWER CONVERSION EQUIPMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve controllability of dv/dt by a gate drive circuit during a turn-on switching period while keeping low loss, high breakdown voltage and high breakdown resistance.SOLUTION: A semiconductor device of the present invention comprises: gate electrodes of a side wall structure on side walls of a wide trench gate; and a polysilicon electrode for breakdown voltage holding which are provided between the gate electrodes; and p layers each provided in a silicon layer between the gate electrode and the polysilicon electrode.