Method for manufacturing an Insulated Gate Bipolar Transistor

摘要

Method for manufacturing an insulated gate bipolar transistor, which includes a drift layer of a first conductivity type between an emitter side, at which a gate and emitter electrode are arranged, and a collector side, at which a collector electrode is arranged including steps:
providing a substrate of a second conductivity type,applying a dopant of the first conductivity type on the first side,creating a drift layer of the first conductivity type on the first layer,diffusing the ions such that a buffer layer is created, having a higher doping concentration than the drift layer,creating a base layer of the second conductivity type on the drift layer,creating an emitter layer of the first conductivity type on the base layer,thinning the substrate on the second side such that the remaining part of the substrate forms a collector layer.

主权项

1. A method for manufacturing an insulated gate bipolar transistor, which comprises a drift layer of a first conductivity type between an emitter side, at which a gate electrode and an emitter electrode are arranged, and a collector side opposite to the emitter side, at which a collector electrode is arranged, wherein the manufacturing method comprises manufacturing steps in the following order:
providing a substrate of a second conductivity type, which is opposite to the first conductivity type, having a first and a second side opposite to the first side and a doping concentration of 5*1015 to 1*1017 cm−3, creating a first layer of the first conductivity type on the first side by applying a dopant of the first conductivity type by epitaxial growth or deposition, resulting in the first layer having a first layer thickness between 0.5 and 2 μm, creating a drift layer of the first conductivity type on the first layer, which has a low doping concentration, diffusing the dopant such that a buffer layer having a buffer layer thickness is created, wherein the buffer layer has a higher doping concentration than the drift layer and such that in a direction perpendicular to the second side the buffer layer does not comprise an area of constant doping concentration, creating a base layer of the second conductivity type on the drift layer, creating an emitter layer of the first conductivity type on the base layer, thinning the substrate on the second side such that the remaining part of the substrate forms a collector layer.