| 摘要 |
This transistor is provided with: a gate electrode; an oxide semiconductor film that includes a channel region facing the gate electrode, and a low resistance region having a resistance value lower than that of the channel region; and a gate insulating film, which is provided between the oxide semiconductor film and the gate electrode, and which has a first surface at a position closer to the oxide semiconductor film, and a second surface at a position closer to the gate electrode. The gate insulating film first surface length in the channel length direction is longer than the maximum gate electrode length in the channel length direction. |
