THREE-STAGE MEMORY ARRANGEMENT

摘要

An electronic memory arrangement having at least three memory areas, a memory control unit, and a writing memory-accessing unit configured to carry out write access. A reading memory-accessing unit is configured to carry out read accesses. The memory control unit determines read and write access to the at least three memory areas, and the memory control unit is configured such that after the writing of a first data packet to one of the three memory areas, a following second data packet to be written is written to one on the three memory area to which read access does not place simultaneously during the write access of the second data packet.