| 摘要 |
PURPOSE:To make the interfacial state between an active layer and a gate region protective film acceptable for reducing off current by a method wherein the gate region protective film is composed of dual layer film with lower layer comprising amorphous silicon nitride. CONSTITUTION:A gate region protective film 5 is a dual layer film composed of a region (lower layer) 51 comprising amorphous silicon nitride in contact with an active layer comprising an amorphous silicon film and an upper layer 52 comprising amorphous silicon dioxide. In such a constitution, the state of interface between the active layer 4 at a channel region (a region between a source and a drain) and the gate region protective film 5 can be made acceptable for reducing off current. |
