发明名称 エピタキシャルプロセスのための半導体製造設備
摘要 Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, a buffer chamber having a storage space for storing the substrates, and a transfer chamber to which the cleaning chamber, the buffer chamber, and the epitaxial chamber are connected to side surfaces thereof, the transfer chamber comprising a substrate handler for transferring the substrates between the cleaning chamber, the buffer chamber, and the epitaxial chamber. The substrate handler successively transfers the substrates, on which the cleaning process is completed, into the buffer chamber, transfers the substrates stacked within the buffer chamber the epitaxial chamber, and successively transfers the substrates, on which the epitaxial layers are respectively formed, into the buffer chamber.
申请公布号 JP5844899(B2) 申请公布日期 2016.01.20
申请号 JP20140523840 申请日期 2012.07.31
申请人 ユ−ジーン テクノロジー カンパニー.リミテッド 发明人 キム,ヨン−デ;ヒョン,ジュン−ジン;ウ,サン−ホ;シン,スン−ウ;キム,ハイ−ウォン
分类号 H01L21/205;B65G49/07;C23C16/02;H01L21/3065;H01L21/677 主分类号 H01L21/205
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