| 摘要 |
A semiconductor device includes a first conductivity type base formed on a surface of a substrate, a second conductivity type emitter formed on a surface of the base, a second conductivity type doped region which, along with accepting a first type of carrier from the emitter, injects the first type of carrier into the base, and is arranged to be spaced apart on the surface of the base from the emitter, and a second conductivity type collector which is formed on an opposite side to the emitter and the doped region, interposing the base. |
