| 摘要 |
Disclosed herein is a semiconductor device which includes a semiconductor substrate and a trench gate. The semiconductor substrate includes a first conductivity type drift layer, a second conductivity type body layer provided on a front surface side of the drift layer, and a first conductivity type first semiconductor layer provided on a part of a front surface of the body layer. The trench gate extends from a front surface of the semiconductor substrate through the body layer and the first semiconductor layer to reach the drift layer. The trench gate includes a gate insulating film formed on an inner wall of a trench, and a gate electrode disposed inside of the gate insulating film. The inner wall of the trench, which is located at a depth where the inner wall makes contact with the body layer of the semiconductor substrate, is a (100) crystal plane of the semiconductor substrate. A width of the trench in a transverse direction which is perpendicular to a longitudinal direction of the trench includes a width located at the front surface of the semiconductor substrate that is narrower than a width located at a depth from a lower end of the first semiconductor layer to a lower end of the body layer of the semiconductor substrate. |
