发明名称 LINEAR SOURCE, AND SUBSTRATE PROCESSING APPARATUS
摘要 The present invention relates to a thin layer depositing apparatus, and more specifically relates to a linear source for evaporating a deposition material to form a thin layer on a substrate and a thin layer depositing apparatus having the same, to precisely control an evaporation direction of the deposition material with respect to the substrate treatment surface to conduct a process for more uniformly treating a substrate. The linear source may comprise: a cylinder part which has a length in a horizontal direction parallel to a surface of the substrate, and has a plurality of nozzles installed on the upper side, spraying the deposition material to the upper side, and has an internal space; one or more connection parts which are connected with the cylinder part to communicate with the internal space, and protrude toward the lower side of the cylinder part; a crucible part which is connected to a lower end of the connection part, and is filled with the deposition material. The linear source has a first temperature control area comprising the crucible part, a second temperature control area comprising the connection part and having a higher temperature than that of the first temperature control area, a third temperature control area comprising the cylinder part and having a higher temperature than that of the second temperature control area, and a fourth temperature control area comprising the plurality of nozzles and having a higher temperature than that of the third temperature control area. The first to the fourth temperature control areas are controlled to be a higher temperature that an evaporation temperature of the deposition material, and are installed with independently controlled heaters, respectively.
申请公布号 KR20160007262(A) 申请公布日期 2016.01.20
申请号 KR20140087672 申请日期 2014.07.11
申请人 WONIK IPS CO., LTD. 发明人 YANG, HO SIK;JEONG, JAE CHEON
分类号 H01L21/203;H01L21/02;H01L51/56 主分类号 H01L21/203
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