发明名称 MEMS ACOUSTIC TRANSDUCER WITH SILICON NITRIDE BACKPLATE AND SILICON SACRIFICIAL LAYER
摘要 A microelectromechanical system (MEMS) microphone has a substrate including a backside trench, and a flexible membrane deposited on the substrate extending over the backside trench. The flexible membrane includes a first electrode. A silicon spacer layer is deposited on a perimeter portion of the flexible membrane. The spacer layer defines an acoustic chamber above the membrane and the backside trench. A silicon rich silicon nitride (SiN) backplate layer is deposited on top of the silicon spacer layer extending over the acoustic chamber. The backplate defines a plurality of opening into the acoustic chamber and includes a metallization that serves as a second electrode.
申请公布号 EP2969911(A1) 申请公布日期 2016.01.20
申请号 EP20140775941 申请日期 2014.03.12
申请人 ROBERT BOSCH GMBH 发明人 FEYH, ANDO;GRAHAM, ANDREW
分类号 H04R19/04;B81B7/02;B81C1/00;H04R31/00 主分类号 H04R19/04
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