发明名称 |
MEMS ACOUSTIC TRANSDUCER WITH SILICON NITRIDE BACKPLATE AND SILICON SACRIFICIAL LAYER |
摘要 |
A microelectromechanical system (MEMS) microphone has a substrate including a backside trench, and a flexible membrane deposited on the substrate extending over the backside trench. The flexible membrane includes a first electrode. A silicon spacer layer is deposited on a perimeter portion of the flexible membrane. The spacer layer defines an acoustic chamber above the membrane and the backside trench. A silicon rich silicon nitride (SiN) backplate layer is deposited on top of the silicon spacer layer extending over the acoustic chamber. The backplate defines a plurality of opening into the acoustic chamber and includes a metallization that serves as a second electrode. |
申请公布号 |
EP2969911(A1) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20140775941 |
申请日期 |
2014.03.12 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
FEYH, ANDO;GRAHAM, ANDREW |
分类号 |
H04R19/04;B81B7/02;B81C1/00;H04R31/00 |
主分类号 |
H04R19/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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