METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE HAVING THE THIN FILM TRANSISTOR

摘要

A method for manufacturing a thin film transistor according to an embodiment of the present invention includes a step of forming an oxide semiconductor layer on a base substrate, a step of performing a plasma process on the oxide semiconductor layer by using plasma generated from nitrogen gas or nitrogen oxide gas to reduce defects in the oxide semiconductor layer, and a step of annealing the plasma-processed oxide semiconductor layer to form a channel layer from the plasma-processed oxide semiconductor layer.