| 摘要 |
PURPOSE:To reduce the microscopic leakage between active elements as well as to form a microscopic element isolation region by a method wherein the surface defective region located on the circumference of a groove when it is formed is coated with an impurity diffusion layer having a shallow junction. CONSTITUTION:After a thermally oxided film 2 has been formed on a single crystal silicon substrate 1, a groove 3 is formed on an element isolation region by performing a reactive ion etching, and the groove is buried by storing a Ti silicon layer 4 thereon by conducting a chemical vapor-phase growing method. After As ions 5 have been implanted into a silicide layer 4, a heat treatment is performed, and a shallow impurity diffusion layer 6 is formed on the circumference of the groove of single crystal. Then, an RCA washing is performed, the Ti silicide is removed by selectively performing an etching, and after the single crystal on the surface of the groove has been coated with the oxide film 2, PSG (phosphorus silicate glass) 7 is stored, high density BPSG 8 is stored, and furol flattening is performed by conducting a heat treatment thereon. Then, a shallow As impurity diffusion layer 6 is formed on the circumference of the groove by removing the high density BPSG and the PSG on the surface by etching, a thermally oxided film 2 is coated thereon, and an element isolation structure, wherein the surface of the groove is flattened by being buried with a PSG (phosphorus silicate glass) 9, is completed.
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