Method for fabricating semiconductor device

摘要

A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.

主权项

1. A method for fabricating a semiconductor device comprising:
forming a dummy gate pattern on a substrate; forming a spacer on a sidewall of the dummy gate pattern and on the substrate; forming a trench by etching the substrate at a side surface of the spacer; forming a semiconductor pattern in the trench where the semiconductor pattern protrudes from the trench above a top surface of the substrate; forming a first recess by removing at least part of the spacer; forming an air gap on both sides of the dummy gate pattern by forming a blocking film that covers the first recess and the dummy gate pattern; exposing the substrate by removing the dummy gate pattern; and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.