Arrays of long nanostructures in semiconductor materials and methods thereof

摘要

An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 μm. All nanowires of the plurality of nanowires are substantially parallel to each other.

主权项

1. An array of nanowires, the array comprising:
a plurality of silicon nanowires, the plurality of silicon nanowires including a plurality of first ends and a plurality of second ends respectively; wherein:
for each silicon nanowire of the plurality of silicon nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 μm; andall silicon nanowires of the plurality of silicon nanowires are substantially parallel to each other,wherein the plurality of silicon nanowires is a part of a thermoelectric device.