Semiconductor device and method for fabricating the same

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a gate structure formed on a substrate, a source/drain extension formed at one side of the gate structure while not being formed at the other side of the gate structure, and doped with a first type impurity, a halo region formed at one side of the gate structure while not being formed at the other side of the gate structure, and doped with a second type impurity different from the first type impurity, a first source/drain region formed at one side of the gate structure and doped with the first type impurity, and a second source/drain region formed at the other side of the gate structure and doped with the first type impurity.

主权项

1. A semiconductor device, comprising:
a gate structure on a substrate; a source/drain extension at a first side of the gate structure and doped with a first type impurity; a halo region at the first side of the gate structure and doped with a second type impurity different from the first type impurity; a first source/drain region at the first side of the gate structure and doped with the first type impurity; a second source/drain region formed at a second side of the gate structure and doped with the first type impurity; and a first recess and a second recess at the first side and the second side of the gate structure in the substrate, the first source/drain region and the second source/drain region being in the first recess and the second recess, respectively, wherein the source/drain extension and the halo region are only at one side of the gate structure.