发明名称 Pattern forming method and apparatus, exposure method and apparatus, and device manufacturing method and device
摘要 During a period after starting exposure to a plurality of shot areas subject to exposure on a wafer until completing the exposure, a light via a slit pair arranged on a stage that holds the wafer, of illumination light via a pattern generating device, is received, and information on a positional relation between an illumination light and the stage (and hence a positional relation between the illumination light and the wafer) is detected. With this operation, even if the information on the positional relation between the illumination light and the wafer varies due to some reason, information on the variation can be detected while performing the exposure to the plurality of shot areas. Accordingly, high-precision exposure can be achieved in an exposure operation, by considering this detection results.
申请公布号 US9239525(B2) 申请公布日期 2016.01.19
申请号 US201113292724 申请日期 2011.11.09
申请人 NIKON CORPORATION 发明人 Owa Soichi
分类号 G03F7/20;G03F9/00 主分类号 G03F7/20
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. An exposure method of exposing an object with an energy beam via a pattern forming apparatus, the method comprising steps of: performing a first exposure to a first pattern formation area on the object; performing a second exposure to a second pattern formation area, different from the first pattern formation area, on the object; between the first exposure and the second exposure, detecting information on a positional relation between the energy beam and the object by receiving the energy beam via the pattern forming apparatus, using a mark arranged on a movable body that holds the object; and by using the detected information, calibrating at least one of movement control information of the movable body, the information on the positional relation between the energy beam and the object, and measurement information of a measurement system that measures a position of the movable body.
地址 Tokyo JP