发明名称 SYSTEM AND METHOD FOR REDUCING BEAM INSTABILITY IN LASER ANNEALING
摘要 PROBLEM TO BE SOLVED: To provide a system and a method for reducing beam instability in laser annealing.SOLUTION: A method for reducing beam instability in laser annealing includes: directing a conditioned laser beam 34 so as to pass through an opening 54 in an aperture 50 using a beam-redirecting element; forming a line image on the surface of a semiconductor wafer 100 by imaging the aperture onto the surface of the semiconductor wafer, thereby locally heating the surface of the semiconductor wafer to form an annealing temperature distribution; detecting a thermal emission from the locally heated wafer surface of the semiconductor wafer; determining the annealing temperature distribution from the detected thermal emission; determining from the annealing temperature distribution a line-image intensity profile that includes a time-varying amount of slope; and adjusting the beam-redirecting element to redirect the conditioned laser beam to reduce or eliminate the time-varying amount of slope in the line-image intensity profile.
申请公布号 JP2016009865(A) 申请公布日期 2016.01.18
申请号 JP20150115495 申请日期 2015.06.08
申请人 ULTRATECH INC 发明人 JAMES T MCWHIRTER;HAWRYLUK M ANDREW;SERGUEI ANIKITCHEV;MASOUD SAFA
分类号 H01L21/268;G01J1/04;G01J5/00;G01J5/28 主分类号 H01L21/268
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