发明名称 |
SYSTEM AND METHOD FOR REDUCING BEAM INSTABILITY IN LASER ANNEALING |
摘要 |
PROBLEM TO BE SOLVED: To provide a system and a method for reducing beam instability in laser annealing.SOLUTION: A method for reducing beam instability in laser annealing includes: directing a conditioned laser beam 34 so as to pass through an opening 54 in an aperture 50 using a beam-redirecting element; forming a line image on the surface of a semiconductor wafer 100 by imaging the aperture onto the surface of the semiconductor wafer, thereby locally heating the surface of the semiconductor wafer to form an annealing temperature distribution; detecting a thermal emission from the locally heated wafer surface of the semiconductor wafer; determining the annealing temperature distribution from the detected thermal emission; determining from the annealing temperature distribution a line-image intensity profile that includes a time-varying amount of slope; and adjusting the beam-redirecting element to redirect the conditioned laser beam to reduce or eliminate the time-varying amount of slope in the line-image intensity profile. |
申请公布号 |
JP2016009865(A) |
申请公布日期 |
2016.01.18 |
申请号 |
JP20150115495 |
申请日期 |
2015.06.08 |
申请人 |
ULTRATECH INC |
发明人 |
JAMES T MCWHIRTER;HAWRYLUK M ANDREW;SERGUEI ANIKITCHEV;MASOUD SAFA |
分类号 |
H01L21/268;G01J1/04;G01J5/00;G01J5/28 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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