FABRICATION AND METHOD OF DEPOSITION P-TYPE TIN OXIDE THIN FILM AND METHOD OF FABRICATING TRANSISTOR

摘要

The present invention provides a method for manufacturing and controlling a tin oxide thin film and a method for manufacturing a transistor using the same, including a step of depositing a p-type tin oxide thin film of a new SnO state under existence of H_2O from an equal tin precursor. The method of the present invention uses an atomic layer deposition (ALD) or a chemical vapor deposition (CVD). The objective of the present invention is to provide the method for manufacturing a logic device like the transistor including a p channel and an n channel, and a diode having a stacked (or alternatively stacked) structure.