INSULATED GATE BIPOLAR TRANSISTOR DEVICE, SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE INSULATED GATE BIPOLAR TRANSISTOR DEVICE OR THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an insulated gate bipolar transistor device, a semiconductor device and a method for forming the insulated gate bipolar transistor device or the semiconductor device.SOLUTION: An insulated gate bipolar transistor device 100 includes a semiconductor substrate including a drift region 112 of an insulated gate bipolar transistor structure. Further, the insulated gate bipolar transistor device 100 includes a first nanowire structure 120 and a first gate structure 130. The first nanowire structure 120 of the insulated gate bipolar transistor structure is connected to the drift region 112. Further, the first gate structure 130 of the insulated gate bipolar transistor structure extends along at least a part of the first nanowire structure 120.