| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching module capable of reducing parasitic inductance of a closed loop including a series connection body of a high potential side chip Swp and a low potential side chip Swn, and a first capacitor 12 connected in parallel to this series connection body.SOLUTION: A high potential side chip Swp, a low potential side chip Swn, a first capacitor 12, high potential side wiring 14H, low potential side wiring 14L, and intermediate wiring 14M are integrally formed by using an insulator 20 to obtain a module 10 with a multilayer structure. In the module 10, each of the high potential side chip Swp and the low potential side chip Swn is provided on a layer sandwiched between each of the high potential side wiring 14H and the low potential side wiring 14L and the intermediate wiring 14M so as to be separated from each other. In the layer sandwiched between each of the high potential side wiring 14H and the low potential side wiring 14L, and the intermediate wiring 14M, the first capacitor 12 is provided between the high potential side chip Swp and the low potential side chip Swn. |
