| 摘要 |
The present invention relates to a semiconductor integrated circuit device having a function of controlling bulk bias. The semiconductor integrated circuit device is configured to output a first external voltage as a bulk voltage of a PMOS transistor during a power-up interval, and to output a second external voltage of a higher level compared to the first external voltage as a bulk voltage of the PMOS transistor during a power-down mode. The present invention is to provide a semiconductor integrated circuit device capable of reducing a leakage current. |
