| 摘要 |
PROBLEM TO BE SOLVED: To provide a shrink agent that can reduce a dimension of a space part in a resist pattern with good dimensional controllability.SOLUTION: A pattern forming method is provided, which comprises: forming a negative pattern by applying a resist composition on a substrate, the resist composition comprising a polymeric compound having a repeating unit in which a carboxyl group is replaced by an acid-labile group, an acid generator, and an organic solvent, heating and then exposing the obtained resist film to high energy rays, heating the film and developing by use of an organic solvent developer; applying a shrink agent solution on the negative pattern, the shrink agent comprising a polymer containing a repeating unit having a tertiary amino group and a solvent selected from an ether solvent having 6 to 12 carbon atoms, an alcohol solvent having 4 to 10 carbon atoms, a hydrocarbon solvent having 6 to 12 carbon atoms, an ester solvent having 6 to 16 carbon atoms, and a ketone solvent having 7 to 16 carbon atoms; baking the coating; and removing the excessive shrink agent so as to reduce a dimension in a space part of the pattern. |
