| 发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a third first-conductivity-type semiconductor layer on a semiconductor substrate; a first pillar-shaped semiconductor layer formed on the semiconductor substrate and including a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second body region, a second second-conductivity-type semiconductor layer, and a third second-conductivity-type semiconductor layer; a first gate insulating film around the first body region; a first gate around the first gate insulating film; a second gate insulating film around the second body region; a second gate around the second gate insulating film; an output terminal connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer; and a first contact that connects the first gate and the second gate. |
| 申请公布号 |
US2016013284(A1) |
申请公布日期 |
2016.01.14 |
| 申请号 |
US201514743570 |
申请日期 |
2015.06.18 |
| 申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
| 分类号 |
H01L29/423;H01L29/40;H01L21/762;H01L21/324;H01L21/311;H01L21/02;H01L27/092;H01L29/06 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a third first-conductivity-type semiconductor layer formed on a semiconductor substrate; a first pillar-shaped semiconductor layer formed on the semiconductor substrate, the first pillar-shaped semiconductor layer including a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second body region, a second second-conductivity-type semiconductor layer, and a third second-conductivity-type semiconductor layer formed from a substrate side in that order; a first gate insulating film formed around the first body region; a first gate formed around the first gate insulating film; a second gate insulating film formed around the second body region; a second gate formed around the second gate insulating film; an output terminal connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer; and |
| 地址 |
Singapore SG |
