发明名称 |
NICKEL THIN FILM ON Si-SUBSTRATE BY CHEMICAL VAPOR DEPOSITION AND METHOD FOR MANUFACTURING NICKEL SILICIDE THIN FILM ON Si-SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for directly forming a Ni thin film on a Si substrate without remaining impurities in the formed Ni thin film, and a method for manufacturing a NiSi film obtained by properly siliciding the Ni thin film.SOLUTION: The method for manufacturing a nickel thin film uses: a Si substrate having any of B, P or As doped on the surface as a substrate; a nickel complex having a cyclopentadienyl group (Cp) or its derivative and chain or cyclic alkenyl group consisting of 3-9 carbon atoms or its derivative coordinated in nickel being a hydrocarbon nickel complex without including any elements except carbon and hydrogen in the structure as a raw material compound: hydrogen as reactive gas; and a deposition pressure of 1-150 torr and a deposition temperature of 80-250°C as deposition conditions. |
申请公布号 |
JP2016006228(A) |
申请公布日期 |
2016.01.14 |
申请号 |
JP20150127262 |
申请日期 |
2015.06.25 |
申请人 |
TANAKA KIKINZOKU KOGYO KK |
发明人 |
NABEYA SHUNICHI;HARADA RYOSUKE;SUZUKI KAZUHARU;SONE TAKAYUKI;YOKOO MICHIHIRO |
分类号 |
C23C16/18;H01L21/28;H01L21/285 |
主分类号 |
C23C16/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|