发明名称 |
PIXEL ARRAYS OF IMAGE SENSORS, AND IMAGE SENSORS INCLUDING THE PIXEL ARRAYS |
摘要 |
Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure. |
申请公布号 |
US2016013227(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201514792862 |
申请日期 |
2015.07.07 |
申请人 |
KIM Seung-Sik;KIM Young-Chan;Shim Eun-Sub;OH Min-Seok;LEE Ji-Won;LIM Moo-Sup;KIM Tae-Han;YANG Dong-Joo |
发明人 |
KIM Seung-Sik;KIM Young-Chan;Shim Eun-Sub;OH Min-Seok;LEE Ji-Won;LIM Moo-Sup;KIM Tae-Han;YANG Dong-Joo |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A pixel array of an image sensor comprising:
a first pixel comprising:
a first photoelectric conversion device configured to generate first charges responding to light incident on the first pixel;a first charge storage device adjacent the first photoelectric conversion device and configured to store the first charges generated by the first photoelectric conversion device;a first floating diffusion device adjacent the first charge storage device; anda first transfer gate configured to control transferring the first charges stored in the first charge storage device to the first floating diffusion device; a second pixel comprising:
a second photoelectric conversion device configured to generate second charges responding to light incident on the second pixel;a second charge storage device adjacent the second photoelectric conversion device and configured to store the second charges generated by the second photoelectric conversion device;a second floating diffusion device adjacent the second charge storage device; anda second transfer gate configured to control transferring the second charges stored in the second charge storage device to the second floating diffusion device; and a storage gate on both the first charge storage device and the second charge storage device. |
地址 |
Hwaseong-si KR |