| 摘要 |
A low-temperature poly-silicon manufacturing method, a method for manufacturing a TFT substrate by using the low-temperature poly-silicon manufacturing method, and a TFT substrate structure. The low-temperature poly-silicon manufacturing method comprises the following steps: step 1, providing a substrate (1); step 2, forming a buffer layer (2) on the substrate (1) in a deposition mode; step 3, patterning the buffer layer (2) to form a convex portion (21) and a concave portion (23) that have different thicknesses; step 4, forming an amorphous silicon layer (3) on the buffer layer (2) provided with the convex portion (21) and the concave portion (23) in a deposition mode; step 5, carrying out excimer laser annealing pretreatment on the amorphous silicon layer (3); and step 6, carrying out an excimer laser annealing process on the amorphous silicon layer (3), and scanning the whole surface of the amorphous silicon layer (3) by using laser beams, so that the amorphous silicon layer (3) is melted and recrystallized to form a poly-silicon layer (4). The method can effectively control the crystallization position and crystallization direction when the amorphous silicon layer is recrystallized. |
