| 发明名称 |
COMPOSITION FOR REMOVING ETCHING RESIDUE, METHOD FOR REMOVING ETCHING RESIDUE AND KIT FOR REMOVING ETCHING RESIDUE USING SAME, AND METHOD FOR MANUFACTURING MAGNETORESISTIVE MEMORY |
| 摘要 |
This composition for removing etching residue contains an oxidant, a glycol compound, and an amine compound, and has the moisture content of 30 wt% or less on the basis of the total amount of the composition. |
| 申请公布号 |
WO2016006456(A1) |
申请公布日期 |
2016.01.14 |
| 申请号 |
WO2015JP68258 |
申请日期 |
2015.06.24 |
| 申请人 |
FUJIFILM CORPORATION |
发明人 |
PARK, KEE YOUNG;MIZUTANI, ATSUSHI |
| 分类号 |
H01L21/304;H01L21/3065;H01L21/8246;H01L27/105;H01L43/12 |
主分类号 |
H01L21/304 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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