| 摘要 |
The invention relates to a radiation source, comprising at least one semiconductor substrate, on which at least two field-effect transistors are formed, which each contain a gate electrode, a source contact, and a drain contact, which bound a channel, wherein the at least two field-effect transistors are arranged adjacent to each other on the substrate, wherein each field-effect transistor has exactly one gate electrode and at least one source contact and/or at least one drain contact is arranged between two adjacent gate electrodes, wherein a ballistic electron transport can be formed in the channel during operation of the radiation source. The invention further relates to a method for producing electromagnetic radiation having a vacuum wavelength between approximately 10 μm and approximately 1 mm. |
| 主权项 |
1. A radiation source (1), comprising at least one semiconductor substrate (10), on which at least two field effect transistors (31, 32, 33, 34) are formed, each of which contains a gate electrode (21, 22, 23, 24), a source contact (11, 12, 13) and a drain contact (41, 42, 43), which bound a channel (311, 321, 331, 341), wherein
the at least two field effect transistors (31, 32, 33, 34) are arranged adjacent to one another on the substrate, wherein each field effect transistor (31, 32, 33, 34) has exactly one gate electrode (21, 22, 23, 24) and at least one source contact (11, 12, 13) and/or at least one drain contact (41, 42, 43) is arranged between two adjacent gate electrodes (21, 22, 23, 24), wherein a ballistic electron transport can be formed in the channel (311, 321, 331, 341) when the radiation source is operated. |
