发明名称 |
Electrically Conductive Element, Power Semiconductor Device Having an Electrically Conductive Element and Method of Manufacturing a Power Semiconductor Device |
摘要 |
An electrically conductive element includes an electrically conductive material and a plurality of inclusions of a phase change material. The phase change material has a phase transition temperature Tc between 150° C. and 400° C. The inclusions are separated from each other and are embedded in the electrically conductive material. |
申请公布号 |
US2016013117(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201514753797 |
申请日期 |
2015.06.29 |
申请人 |
Infineon Technologies AG |
发明人 |
Woehlert Stefan;Nelhiebel Michael;Roehl Siegfried |
分类号 |
H01L23/427;H01L21/768;H01L23/532;H01L21/48 |
主分类号 |
H01L23/427 |
代理机构 |
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代理人 |
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主权项 |
1. A power semiconductor device, comprising:
a semiconductor body; an active portion of the power semiconductor device formed in the semiconductor body; and an electrically conductive element electrically coupled to the active portion in the semiconductor body, the electrically conductive element comprising: an electrically conductive material; and a plurality of inclusions of a phase change material, the phase change material having a phase transition temperature Tc between 150° C. and 400° C., wherein the inclusions are separated from each other and embedded in the electrically conductive material. |
地址 |
Neubiberg DE |