发明名称 Electrically Conductive Element, Power Semiconductor Device Having an Electrically Conductive Element and Method of Manufacturing a Power Semiconductor Device
摘要 An electrically conductive element includes an electrically conductive material and a plurality of inclusions of a phase change material. The phase change material has a phase transition temperature Tc between 150° C. and 400° C. The inclusions are separated from each other and are embedded in the electrically conductive material.
申请公布号 US2016013117(A1) 申请公布日期 2016.01.14
申请号 US201514753797 申请日期 2015.06.29
申请人 Infineon Technologies AG 发明人 Woehlert Stefan;Nelhiebel Michael;Roehl Siegfried
分类号 H01L23/427;H01L21/768;H01L23/532;H01L21/48 主分类号 H01L23/427
代理机构 代理人
主权项 1. A power semiconductor device, comprising: a semiconductor body; an active portion of the power semiconductor device formed in the semiconductor body; and an electrically conductive element electrically coupled to the active portion in the semiconductor body, the electrically conductive element comprising: an electrically conductive material; and a plurality of inclusions of a phase change material, the phase change material having a phase transition temperature Tc between 150° C. and 400° C., wherein the inclusions are separated from each other and embedded in the electrically conductive material.
地址 Neubiberg DE