| 摘要 |
<p>Provided is a processing method that, when scanning a line beam and emitting the same onto a semiconductor substrate, enables highly accurate operation without making the mechanism of a scanning device for moving the semiconductor substrate complicated, and in order to make the processing method applicable to large semiconductor substrates, a semiconductor substrate supported by a support unit is processed in such a way that the semiconductor substrate is caused to move together with the support unit, thereby emitting line beams in parallel in a plurality of passes while scanning the line beams relative to the short axis direction. The processing method comprises the following: a substrate rotation step for rotating the semiconductor substrate so that the front-back position of the semiconductor substrate changes between a first emission pass step and a subsequent emission pass step and the position of the semiconductor substrate with respect to the emission position of the line beams is altered; and a substrate inclination adjustment step for adjusting the inclination of the semiconductor substrate, before the first emission pass step and after the substrate rotation step which is before the subsequent emission pass step.</p> |
