| 摘要 |
The present embodiment according to the present invention can provide a Group III nitride semiconductor device having a p-type gallium nitride based semiconductor layer with a reduced oxygen concentration. The Group III nitride semiconductor device 11 has the substrate 13, an n-type Group III nitride semiconductor epitaxial region 15, a light emitting layer 17, and a p-type Group III nitride semiconductor epitaxial region 19. The substrate 13 has the primary surface 13a comprising a first gallium nitride based semiconductor and exhibits electrical conductivity. The primary surface 13a of the substrate 13 is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane Sc perpendicular to a reference axis Cx which extends along the c-axis of the first gallium nitride based semiconductor. The p-type Group III nitride semiconductor region 19 can include one or more p-type gallium nitride based semiconductor layers. The p-type Group III nitride semiconductor region 19 includes a first p-type gallium nitride based semiconductor layer 21 and an oxygen concentration of the first p-type gallium nitride based semiconductor layer 21 is not more than 5×10 17 cm -3 . A concentration ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer 21 is not more than 1/10. |
