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发明名称
Memory device
摘要
<p>본 발명은 기판 상에 하부 전극, 버퍼층, 시드층, 자기 터널 접합, 캐핑층, 합성 교환 반자성층 및 상부 전극이 적층 형성되고, 하부 전극 및 시드층은 다결정의 도전 물질로 형성되며, 400℃ 이상의 열처리 온도에서도 자기 터널 접합의 수직 자기 이방성이 유지되는 메모리 소자를 제시한다.</p>
申请公布号
KR101583783(B1)
申请公布日期
2016.01.13
申请号
KR20140102420
申请日期
2014.08.08
申请人
한양대학교 산학협력단
发明人
박재근;이두영;이승은;전민수;백종웅;심태헌
分类号
G11C11/16;H01L43/08
主分类号
G11C11/16
代理机构
代理人
主权项
地址
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