Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and method of their manufacture

摘要

Methods are generally provided for forming a cadmium sulfide layer 18 on a substrate 12. In one particular embodiment, the method can include sputtering a cadmium sulfide layer 18 on a substrate 12 in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device 10. Cadmium telluride based thin film photovoltaic devices 10 are also generally provided. The device can include a substrate 12; a transparent conductive oxide layer 14 on the substrate 12; a cadmium sulfide layer 18 on the transparent conductive oxide layer 14; and, a cadmium telluride layer 20 on the cadmium sulfide layer 18. The cadmium sulfide layer 18 includes fluorine.