METHOD AND APPARATUS FOR PLASMA DICING A SEMI-CONDUCTOR WAFER
摘要
<p>The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.</p>
申请公布号
EP2965349(A2)
申请公布日期
2016.01.13
申请号
EP20140712447
申请日期
2014.03.03
申请人
PLASMA-THERM, LLC
发明人
MARTINEZ, LINNELL;PAYS-VOLARD, DAVID;JOHNSON, CHRIS;JOHNSON, DAVID;WESTERMAN, RUSSELLL;GRIVNA, GORDON, M.