Circuit and system of using junction diode of MOS as program selector for programmable resistive devices

摘要

A programmable resistive device cell using at least one MOS device as selector can be programmed or read by turning on a source junction diode of the MOS or a channel of the MOS. A programmable resistive device cell can include at least one programmable resistive element and at least one MOS device. The programmable resistive element can be coupled to a first supply voltage line. The MOS can have a source coupled to the programmable resistive element, a bulk coupled to a drain, a drain coupled to a second supply voltage line, and a gate coupled to a third supply voltage line. The programmable resistive element can be configured to be programmable or readable by applying voltages to the first, second, and/or third supply voltage lines to turn on the source junction of the MOS and/or to turn on the channel of the MOS.

主权项

1. A programmable resistive device (PRD) memory comprising:
a plurality of PRD cells, at least one of the PRD cells including at least:
at least one programmable resistive element (PRE) coupled to a first supply voltage line; andat least one Metal-Oxide-Semiconductor (MOS) device having a source coupled to the PRE, a bulk coupled to a drain, the drain coupled to a second supply voltage line, and a gate coupled to a third supply voltage line, wherein the PRE is configured to be programmable by applying voltages to the first, second, and/or third supply voltage lines to turn on the source junction diode or a channel of the MOS to thereby change the PRE into a different logic state.