Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices

摘要

One method disclosed includes, among other things, forming a raised isolation post structure between first and second fins, wherein the raised isolation post structure partially defines first and second spaces between the first and second fins, respectively, and forming a gate structure around the first and second fins and the raised isolation post structure, wherein at least portions of the gate structure are positioned in the first and second spaces. One illustrative device includes, among other things, first and second fins, a raised isolation post structure positioned between the first and second fins, first and second spaces defined by the fins and the raised isolation post structure, and a gate structure positioned around a portion of the fins and the isolation post structure.

主权项

1. A method of forming a FinFET transistor above a semiconductor substrate, wherein the method comprises:
performing at least one etching process so as to define first and second fins in said substrate; forming a raised isolation post structure between said first and second fins, said raised isolation post structure having an upper surface that is at a level that is approximately equal to or greater than a level of an upper surface of each of said first and second fins, said raised isolation post structure partially defining a first space between said raised isolation post structure and said first fin and a second space between said raised isolation post structure and said second fin, wherein a depth of said first and second spaces defines a final fin height of said respective first and second fins; and after forming said raised isolation post structure, forming a gate structure around a portion of each of said first and second fins and around a portion of said raised isolation post structure, wherein at least portions of said gate structure are positioned in said first and second spaces.