High mobility field effect transistor with ZN containing active layer, display device, sensor, and method of manufacturing field effect transistor

摘要

A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer.

主权项

1. A field effect transistor comprising:
a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer and whose structural elements are In, Ga, Zn, and O, and whose resistivity is higher than that of the oxide semiconductor layer, wherein, in a case in which an element composition ratio of the oxide semiconductor layer is Sn:Ga:Zn =a:b:c, the element composition ratio satisfies a+b=2, and 1≦a≦2, and 1≦c≦11/2,and c≧−7b/4+11/4.