String selection structure of three-dimensional semiconductor device

摘要

A three-dimensional semiconductor device includes first and second selection lines stacked one on the other. An upper line horizontally crosses over the first and second selection lines. First and second vertical patterns vertically cross the first and second selection lines. The first and second vertical patterns are connected in common to the upper line. Each of the first and second vertical patterns constitutes first and second selection transistors that are connected in series to each other. The first selection transistors of the first and second vertical patterns are controlled by the first and second selection lines, respectively.

主权项

1. A three-dimensional semiconductor device, comprising:
a selection line extending along a first direction; first and second upper lines horizontally crossing over the selection line and extending along a second direction orthogonal to the first direction; and first and second vertical patterns vertically crossing the selection line and extending along a third direction orthogonal to the first and second directions, the first and second vertical patterns connected to the first and second upper lines, respectively, wherein each of the first and second vertical patterns overlaps both of the first and second upper lines, when viewed from plan view.