METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

摘要

Provided is a method for forming a pattern of a semiconductor device. The method for forming a pattern of a semiconductor device includes the steps of: forming a material layer on a substrate; forming a hard mask on the material layer; forming a first mold mask pattern and a second mold mask pattern on the hard mask; forming a pair of first spacers covering both sidewalls of the first mold mask pattern, and a pair of second spacers covering both sidewalls of the second mold mask pattern; forming a first gap and a second gap exposing the hard mask by removing the first mold mask pattern and the second mold mask pattern, wherein the first gap is formed between the pair of first spacers, and the second gap is formed between the pair of second spacers; forming a mask pattern on the hard mask, wherein the mask pattern covers the first gap and exposes the second gap; forming an auxiliary pattern covering the second gap; removing the mask pattern; and forming the mask pattern by patterning the hard mask using the first spacer, the second spacer and the subsidiary pattern as a mask.