Semiconductor device with field-inducing structure

摘要

The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.

主权项

1. A semiconductor device structure, comprising:
a fin formed in a semiconductor substrate, said fin comprising an upper fin portion having opposing sidewall surfaces, wherein each of said opposing sidewall surfaces has a lower sidewall portion and an upper sidewall portion that extends continuously upward from said lower sidewall portion; a field-inducing structure that is adapted to induce a field effect in said fin, wherein said field-inducing structure is positioned on and covers at least one of said lower sidewall portions but is not positioned on and does not cover said upper sidewall portions; a gate dielectric layer that is positioned on and covers each of said upper sidewall portions but is not positioned on and does not cover said at least said one of said lower sidewall portion; and an insulating layer, wherein said insulating layer covers said field-inducing structure and is positioned between said field-inducing structure and said gate dielectric layer.