SCR simulation model

摘要

A model for simulating the electrical behavior of a thyristor includes a model of an NPN bipolar transistor whose emitter forms the cathode of the thyristor and the base forms a low-side control terminal of the thyristor, and a model of a PNP bipolar transistor whose emitter forms the anode of the thyristor and the base forms a high-side control terminal of the thyristor, the collector of the PNP transistor being connected to the low-side control terminal and the collector of the NPN transistor being connected to the high-side control terminal. The transistor models are present a small signal behavior over the entire range of anode currents of the thyristor, whereby the transistor models exhibit a gain drop when the anode current exits the small signal range.

主权项

1. A method of electrical simulation of an integrated circuit including at least one thyristor comprising:
using a thyristor model for the electrical simulation of the at least one thyristor of the integrated circuit, the thyristor model comprising
an NPN bipolar transistor having an emitter defining a cathode of the thyristor and a base defining a low-side control terminal of the thyristor,a PNP bipolar transistor having an emitter defining an anode of the thyristor and a base defining a high-side control terminal of the thyristor, and with a collector of the PNP bipolar transistor being coupled to the low-side control terminal and a collector of the NPN bipolar transistor being coupled to the high-side control terminal,a first compensation current source coupled between the emitter and the collector of the NPN bipolar transistor, and a second compensation current source coupled between the emitter and the collector of the PNP bipolar transistor; andwherein a law of variation of each of the first and second compensation current sources corresponds to an equation expressing an evolution of a recombination current, and is used with, as a variable, a linear combination of voltages VANw and VPwC, where VANw is a voltage across an emitter-base junction of the PNP bipolar transistor and VPwC is a voltage across a base-emitter junction of the NPN bipolar transistor; and adjusting each of the first and second compensation current sources of the thyristor model based on the corresponding equation to compensate for a gain drop of the corresponding NPN and PNP bipolar transistors during the electrical simulation.